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Preliminary
Tri-Band HBT Power Amplifier Module
AP134-501 Features
I 3.2 V Nominal Operating Voltage I 50 Internally Matched Input and Output I High Power Added Efficiency: 55% for GSM and 50% for DCS and PCS I Small Size: 10 x 8 x 1.6 mm MCM Land Grid Array Package I Low Current Standby Mode: < 10 A I Integral Band Select and Analog Power Control I GPRS Class 12 Capable
MOLD CAP 0.04 (1.05 mm) 0.002 (0.05 mm) PIN 1 INDICATOR
-501
TOP VIEW 0.394 (10.0 mm) 0.004 (0.1 mm) BOTTOM VIEW 0.075 (1.91 mm) BSC 0.069 (1.75 mm) 0.002 (0.051 mm)
16 1
0.075 (1.91 mm) BSC
0.315 (8.0 mm) 0.004 (0.1 mm)
0.082 (2.09 mm) 0.002 (0.051 mm)
0.069 (1.75 mm) 0.002 (0.051 mm)
0.046 (1.18 mm) 0.002 (0.051 mm) SIDE VIEW 0.06 (1.56 mm) 0.004 (0.10 mm)
Description
The AP134-501 is a high performance IC power amplifier module designed for use as the final amplification stage in tri-band GSM and GPRS mobile phone applications (880-915, 1710-1785 and 1850-1910 MHz). It features 3-cell battery operation, a band select switch, a single positive analog power control input for both bands, and exceptional power added efficiency. The amplifier is manufactured on an advanced InGaP HBT process, known industry-wide for its excellent reliability and performance. The amplifier module is completely selfcontained, requiring no external matching components.
Absolute Maximum Ratings
Characteristic Supply Voltage VCC, Standby Mode, VAPC < 0.3, No RF Input Power Power Control Voltage Band Select Voltage Input Power (CW) Operating Case Temperature Storage Temperature Value 6V 4V 4V 15 dBm -35 to +85C -45 to 120C
DC Specifications
Parameter Supply Voltage Leakage Current Band Select Voltage Band Select Current Power Control Voltage Power Control Current 0.1 No RF Input Power GSM DCS/PCS 0 2.0 Condition Min. 2.8 Typ. 3.2 Max. 4.2 10 0.5 2.8 1.0 1.9 1.0 Unit V A V V mA V mA
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 8/01A
1
Tri-Band HBT Power Amplifier Module
AP134-501
Electrical Specifications
GSM Mode
Parameter Frequency Output Power VCC = 2.8 V, T = -20 to +70C Dynamic Range Power Control Slope Power Added Efficiency Input Power Input VSWR Forward Isolation Harmonics Noise in the RX Band POUT = 5-35 dBm PIN = -5 dBm, VAPC = 0.1 V PIN = 10 dBm, VAPC = 0.1 V 2 F0...7 F0 925 MHz, 100 KHz BW 935 MHz, 100 KHz BW 1805-1880 MHz, 100 KHz BW 1930-1990 MHz, 100 KHz BW Ruggedness Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V 2 F0 Measured at DCS Output 3 F0 Measured at DCS Output
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25C
Condition
Min. 880 34 32.5 60
Typ. 35
Max. 915
Unit MHz dBm dBm dB
VAPC = 0.1-1.9 V VAPC = 0.1-1.9 V POUT = 34 dBm
75 50 3 55 6
150 10 2:1 -40 -25 -10 -72 -84 -76 -76
dB/VAPC % dBm dBm dBm dBm dBm dBm dBm dBm
No Module Damage or Permanent Performance Degradation -36 dBm
Stability
Band to Band Isolation
-20 -20
dBm dBm
DCS/PCS Mode
Parameter Frequency Output Power VCC = 2.8 V, T = -20 to +70C Dynamic Range Power Control Slope Power Added Efficiency Input Power Input VSWR Forward Isolation Harmonics Noise in the RX Band Ruggedness POUT = 0-32 dBm PIN = -5 dBm, VAPC = 0.1 V PIN = 10 dBm, VAPC = 0.1 V 2 F0...7 F0 1805-1880 MHz, 100 KHz BW Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN =10 dBm, VAPC = 1.9 V Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 1.9 V VAPC = 0.1-1.9 V VAPC = 0.1-1.9 V POUT = 31.9 dBm 42 3 DCS PCS Condition Min. 1710 1850 31.9 29.5 60 75 50 6 10 2:1 -48 -20 -10 -76 No Module Damage or Permanent Performance Degradation -36 dBm dBm dBm dBm dBm 150 32.5 Typ. Max. 1785 1910 Unit MHz MHz dBm dBm dB dB/VAPC % dBm
Stability
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25C
2
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
Typical Performance Data
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5-7% in PAE.
40 70 40 70
Power Added Efficiency (%)
Power Added Efficiency (%)
POUT (dBm) and Gain (dB)
30 20 10 0 -10 -20 -30 -40 0 0.5 1.0 1.5 PAE Gain POUT
60 50 40 30 20 10 0 -10 2.0
POUT (dBm) and Gain (dB)
30 20 10 0 -10 -20 -30 -40 0 0.5 1.0 1.5 Gain PAE POUT
60 50 40 30 20 10 0 -10 2.0
VAPC (V)
VAPC (V)
VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm
40 70
VCC = 3.2 V, Frequency = 1750 MHz, PIN = 6 dBm
40 70
Power Added Efficiency (%)
Power Added Efficiency (%)
POUT (dBm) and Gain (dB)
30 20 10 0 -10 -20 -30 -40 0 0.5 1.0 1.5 POUT Gain PAE
60 50 40 30 20 10 0 -10 2.0
POUT (dBm) and Gain (dB)
30 20 10 0 -10 -20 -30 -40 0 0.5 1.0 1.5 POUT 915 MHz POUT 880 MHz POUT 900 MHz PAE 880 MHz PAE 900 MHz PAE 915 MHz
60 50 40 30 20 10 0 -10 2.0
VAPC (V)
VAPC (V)
VCC = 3.2 V, Frequency = 1910 MHz, PIN = 6 dBm
40 30 20 70
VCC = 2.8 V, Frequency = 900 MHz, PIN = 6 dBm
40 70
Power Added Efficiency (%)
Power Added Efficiency (%)
60 POUT 880 MHz POUT 900 MHz POUT 915 MHz PAE 880 MHz PAE 900 MHz PAE 915 MHz 0 0.5 1.0 1.5 50 40 30 20 10 0 -10 2.0
30 20
60 POUT 880 MHz POUT 900 MHz PAE 880 MHz 50 40 30 20 PAE 900 MHz PAE 915 MHz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 -10
POUT (dBm)
POUT (dBm)
10 0 -10 -20 -30 -40
10 0 -10 -20 -30 -40
POUT 915 MHz
VAPC (V)
VAPC (V)
POUT and PAE vs. VAPC and Frequency, VCC = 3.2 V, PIN = 6 dBm
POUT and PAE vs. VAPC and Frequency, VCC = 4.2 V, PIN = 6 dBm
3
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed performance adds 0.5 dB of output power and 5-7% in PAE.
40 30 20 POUT @ VCC = 4.2 POUT @ VCC = 3.2 POUT @ VCC = 2.8 PAE @ VCC = 3.2 PAE @ VCC = 4.2 PAE @ VCC = 2.8 0 0.5 1.0 1.5 70 40 60 POUT 75C POUT -25C
Power Added Efficiency (%)
Power Added Efficiency (%)
60 50 40 30 20 10 0 -10 2.0
30
50 40
POUT (dBm)
POUT (dBm)
20 10 0 -10 -20
10 0 -10 -20 -30 -40
POUT 25C 30 PAE 75C PAE 25C PAE -25C 20 10 0 0 -10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-30
VAPC (V)
Control Voltage - VAPC (V)
POUT and PAE vs. VCC and VAPC PIN = 6 dBm
40 POUT 75C 30 POUT 25C POUT -25C 10 0 -10 -20 -30 0 PAE 75C PAE 25C PAE -25C 50 40 30 20 10 0 -10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 60 40
POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 880 MHz
60
Power Added Efficiency (%)
Power Added Efficiency (%)
30
POUT 75C POUT 25C
50 40
POUT (dBm)
POUT (dBm)
20
20 10 0 -10 -20 -30 0 PAE -25C PAE 25C PAE 75C POUT -25C
30 20 10 0
-10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Control Voltage - VAPC (V)
Control Voltage - VAPC (V)
POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 1710 MHz
36.0 35.8 35.6 35.4 35.2 35.0 34.8 34.6 34.4 34.2 34.0 0 20 40 60 80 PAE POUT 60
POUT and PAE vs. Temperature VCC = 3.2 V, PIN = 6 dBm, Frequency = 1850 MHz
40
Power Added Efficiency (%)
59 58 57 56 55 54 53 52 51 50 100
30
POUT, F0 2 F0 and 3 F0 (dBm)
20 10 0 -10 -20 -30 -40 -50 0 0.5
F0 (dBm)
POUT (dBm)
2 F0 (dBm)
3 F0 (dBm) 1.0 1.5 2.0
Duty Cycle (%)
VAPC (V)
Duty Cycle Effects on Module Performance VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm
4
Harmonic Performance VCC = 3.2 V, Frequency = 900 MHz, PIN = 6 dBm
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
Pin Out
DCS/PCS Out DCS/PCS In
Application Schematic
50 Microstrip DCS/ PCS In
1
50 Microstrip VCC
16 13
GND
1
16
15
GND
DCS/ PCS Out
Vcc
14
13 12
VAPC VCC VBS
2
GND VCC GND
VAPC VCC VBS
2 11
3
CMOS ASIC
11
4 5 6 7 8 9
10
3
VCC
VCC
GSM Out
GSM In
GND
GND
4
5
6
9
50 Microstrip
Pin Out Description
Pin 1 2 Symbol DCS/ PCS_In VAPC Description RF input to DCS/PCS power amplifier. Analog power control input voltage. 10 nF RF bypassing capacitor recommended. Power supply input voltage. A 10 F RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. Band select input voltage. RF input to GSM power amplifier. Power supply input voltage. 10 F RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. Ground connection. Ground connection. RF output for GSM amplifier. Ground connection. Power supply input voltage. 10 F RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board. Ground connection. RF output for DCS/PCS power amplifier. Ground connection. Ground connection. Power supply input voltage. 10 F RF bypassing capacitor is required. This capacitor is only required to help reduce power supply ripple on the test board.
GSM In
VCC
50 Microstrip GSM Out
3
VCC
4 5 6
VBS GSM_In VCC
7 8 9 10 11
GND GND GSM_Out GND VCC
12 13 14 15 16
GND DCS/ PCS_Out GND GND VCC
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 8/01A
5

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